Non-contact and non-destructive measurement of carrier concentration of nitrogen-doped ZnSe by reflectance difference spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 11, 1997, Pages 6638-6644

  Jin, Cheng Guo ^a,b   Yasuda, Tetsuji ^a,b   Kimura, Kozo ^a,c   Ohtake, Akihiro ^a,c   Kuo, Li Hsin ^a,c   Wang, Tai Hong ^a,c   Miwa, Shiro ^a,c   Yao, Takafumi ^a,b,d   Tanaka, Kazunobu ^a,b,e  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

^c Angstrom Technology Partnership   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

^e UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Doping; Linear electro optic effect; p ZnSe; Reflectance difference spectroscopy

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC FIELD EFFECTS; ELECTROOPTICAL EFFECTS; NITROGEN; NONDESTRUCTIVE EXAMINATION; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS; SURFACE ROUGHNESS;

OPTICAL ANISOTROPY; REFLECTANCE DIFFERENCE SPECTROSCOPY; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0031277305     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6638     Document Type: Article

References (26)

1. M. A. Hasse, J. Qiu, J. M. Depuydt and H. Cheng: Appl. Phys. Lett. 59 (1991) 1272.
2. A. Ishibashi: J. Cryst. Growth 159 (1996) 555.
3. R. L. Gunshor and A. V. Nurmikko: MRS Bull. 20 (1995) 15.
4. J. Qiu, J. M. DePuydt, H. Cheng and M. A. Hasse: Appl. Phys. Lett. 59 (1991) 2992.
5. T. Yao, Z. Zhu, Y. H. Wu, C. D. Song, F. Nishiyama, K. Kimura, H. Kajiyama, S. Miwa and T. Yasuda: J. Cryst. Growth 159 (1996) 214.
6. K. Kimura, S. Miwa, T. Yasuda, L. H. Kuo, C. G. Jin, K. Tanaka and T. Yao: Appl. Phys. Lett. 70 (1997) 81.
7. K. Kimura, S. Miwa, C. G. Jin, L. H. Kuo, T. Yasuda, A. Ohtake, K. Tanaka, T. Yao and H. Kobayashi: submitted to Appl. Phys. Lett.
8. L. Berkovits, I. V. Makarenko, T. A. Minashwili and V. I. Safarov: Sov. Phys. Semicond. 20 (1986) 654.
9. S. E. Acosta-Ortiz and A. Lastras-Martinez: Phys. Rev. B 40 (1989) 1426.
10. H. Tanaka, E. Colas, I. Kamiya, D. E. Aspnes and R. Bhat: Appl. Phys. Lett. 59 (1991) 3443.
11. H. H. Farrell, M. C. Tamargo, T. J. Gmitter, A. L. Weaver and D. E. Aspnes: J. Appl. Phys. 70 (1991) 1033.
12. A. Yariv: Quantum Electronics (Wiley, New York, 1975) 2nd ed., p. 327.
13. K. Kimura, H. Kajiyama, S. Miwa, T. Yasuda, L. H. Kuo, C. G. Jin, K. Tanaka and T. Yao: Mater. Res. Soc. Symp. Proc. 406 (1996) 51.
14. D. E. Aspnes, J. P. Harbison, A. A. Studna, L. T. Florez and M. K. Kelly: J. Vac. Sci. Technol. A 6 (1988) 1327.
15. S. Adachi and T. Taguchi: Phys. Rev. B 43 (1991) 9569.
16. D. E. Aspnes: Phys. Rev. B 41 (1990) 10334.
17. S. M. Scholz, A. B. Muller, W. Richter, D. R. T. Zahn, D. I. Westwood, D. A. Woolf and R. H. Willams: J. Vac. Sci. Technol. B 10 (1992) 1710.
18. S. Tomiya, R. Minatoya, H. Tsukamoto, S. Itoh, K. Morita, A. Ishibashi and M. Ikeda: Proc. 23rd Int. Conf. Physics of Semiconductors, Berlin, 1996, p. 1079.
19. D. E. Aspnes: J. Opt. Soc. Am. 63 (1973) 1380.
20. D. E. Aspnes and A. Frova: Solid State Commun. 7 (1969) 155.
21. C. G. Jin: in preparation for publication.
22. K. Tada and M. Aoki: Jpn. J. Appl. Phys. 10 (1971) 998.
23. K. Kikuchi and K. Tada: Jpn. J. Appl. Phys. 17 (1978) 825.
24. C. G. Jin: in preparation for publication.
25. D. A. G. Bruggeman: Ann. Phys. (Leipzig) 24 (1935) 636.
26. D. E. Aspnes: Thin Solid Films 89 (1982) 249.