Nanometer-scale studies of point defect distributions in GaMnAs alloys

Applied Physics Letters

Volumn 86, Issue 1, 2005, Pages

  Gleason, J N ^a   Hjelmstad, M E ^a   Dasika, V D ^a,c   Goldman, R S ^a,c   Fathpour, S ^b   Charkrabarti, S ^b   Bhattacharya, P K ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b University of Michigan   (United States)

^c NONE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGES; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY (XSTM); RANDOM DISTRIBUTIONS; SCANNING TUNNELING SPECTROSCOPY (STS);

COMPOSITION; CORRELATION METHODS; ELECTRIC POTENTIAL; FERMI LEVEL; MOLECULAR BEAM EPITAXY; POINT DEFECTS; POSITRON ANNIHILATION SPECTROSCOPY; SAMPLING; SCANNING TUNNELING MICROSCOPY;

GALLIUM ALLOYS;

EID: 19744382864     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1843284     Document Type: Article

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