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Volumn 78, Issue 1, 2001, Pages 82-84

Arrangement of nitrogen atoms in GaAsN alloys determined by scanning tunneling microscopy

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[No Author keywords available]

Indexed keywords


EID: 0000658160     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1337625     Document Type: Article
Times cited : (49)

References (18)
  • 10
    • 0346229746 scopus 로고    scopus 로고
    • note
    • The observed depth of the N-containing unit cells does, of course, depend on the probe tip sharpness. Concerning electronic effects, filled state images always shows depressions for the N atoms whereas empty state images (revealing the cations) display relatively little height variation around the N atoms.
  • 17
    • 0347490705 scopus 로고    scopus 로고
    • note
    • For a rectangular grid of sites, with a N atom at the origin, then for a site at position (i,j) the number of equivalent such sites is 2 if i = () or J = (). and 4 otherwise.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.