Defect structure of Ga1-xMnxAs: A cross-sectional scanning tunneling microscopy study

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 8, 2004, Pages

  Mikkelsen, A ^a   Sanyal, B ^b   Sadowski, J ^a,c   Ouattara, L ^a   Kanski, J ^d   Mirbt, S ^b   Eriksson, O ^b   Lundgren, E ^a  

^a LUND UNIVERSITY   (Sweden)

^b UPPSALA UNIVERSITY   (Sweden)

^c INSTITUTE OF PHYSICS   (Poland)

^d CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; GALLIUM; MANGANESE DERIVATIVE;

ARTICLE; CALCULATION; CHEMICAL ANALYSIS; CHEMICAL STRUCTURE; COLOR; CONCENTRATION RESPONSE; CORRELATION ANALYSIS; ELECTRIC POTENTIAL; ENERGY; ENERGY TRANSFER; GEOMETRY; IMAGE ANALYSIS; PHYSICOCHEMICAL MODEL; SCANNING TUNNELING MICROSCOPY; STRUCTURE ANALYSIS; SUBSTITUTION REACTION; SURFACE PROPERTY; TECHNIQUE;

EID: 19544376314     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.085411     Document Type: Article

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