Formation energies and charge states of native defects in GaAs: A selected compilation from the literature

Semiconductor Science and Technology

Volumn 11, Issue 8, 1996, Pages 1156-1158

  Luken, K M ^a   Morrow, R A ^b  

^a ROCKHURST UNIVERSITY   (United States)

^b University of Maine   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ENERGY GAP; FERMI LEVEL; POINT DEFECTS;

BINDING ENERGIES; FORMATION ENERGIES; GALLIUM ARSENIDE COMPLEXES; NATIVE POINT DEFECTS; REACTION ENERGIES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030205442     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/8/006     Document Type: Article

References (9)

1. Baraff G A and Schlüter M 1985 Phys. Rev. Lett. 55 1327
2. Baraff G A and Schlüter M 1986 Phys. Rev. B 33 7346
3. Zhang S B and Northrup J E 1991 Phys. Rev. Lett. 67 2339
4. Northrup J E and Zhang S B 1993 Phys. Rev. B 47 6791
5. Northrup J E and Zhang S B 1994 Phys. Rev. B 50 4962
6. Cheong B-H and Chang K J 1994 Phys. Rev. B 49 17 436
7. Scherz U and Scheffler M 1993 Semiconductors and Semimetals vol 38 (New York: Academic) p 1
8. Ga (Chadi, private communication).)
9. Schlüter M 1985 Mater. Res. Soc. Sym. Proc. 46 61