Microscopic identification of dopant atoms in Mn-doped GaAs layers

Solid State Communications

Volumn 121, Issue 2-3, 2002, Pages 79-82

  Tsuruoka, T ^a,b   Tanimoto, R ^a   Tachikawa, N ^a   Ushioda, S ^a,b   Matsukura, F ^a   Ohno, H ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b RIKEN   (Japan)

Author keywords

A. Mn doped GaAs; C. Impurities in semiconductors; C. Scanning tunneling microscopy

Indexed keywords

CARRIER CONCENTRATION; HALL EFFECT; IMPURITIES; MANGANESE; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DOPING;

CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY (XSTM);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037005688     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(01)00471-9     Document Type: Article

References (13)