STM nanospectroscopic studies of individual As-antisite defects in GaAs

Materials Science in Semiconductor Processing

Volumn 6, Issue 5-6, 2003, Pages 253-256

  Maeda, K ^a,b   Hida, A ^a   Iguchi, Y ^a   Mera, Y ^a,b   Fujiwara, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Antisite; EL2; GaAs; Photoquenching; Scanning tunneling microscopy; Spectroscopy

Indexed keywords

ARSENIC; CRYSTALS; ELECTRIC FIELD EFFECTS; LIGHTING; MONOCHROMATORS; PHOTOCHEMICAL REACTIONS; QUENCHING; SCANNING TUNNELING MICROSCOPY; SPECTROSCOPIC ANALYSIS;

ANTISITE; EL2; PHOTOQUENCHING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1842431480     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2003.07.005     Document Type: Conference Paper

References (16)

1. Kaminska M, Weber ER. In: Weber ER, editor. Imperfections in III/V materials. Boston: Academic Press, 1993. p. 59-89.
2. Nolte D.D. Metastable optical gratings in compound semiconductors. J Appl Phys. 79:1996;7514-7522.
3. Alex V., Weber J. Optical data storage in semi-insulating GaAs. Appl Phys Lett. 72:1998;1820-1822.
4. Feenstra R.M., Woodall J.M., Pettit G.D. Observation of bulk defects by scanning tunneling microscopy and spectroscopy; arsenic antisite defects in GaAs. Phys Rev Lett. 71:1993;1176-1179.
5. Hida A., Mera Y., Maeda K. Identification of arsenic antisite defects with EL2 by nanospectroscopic studies of individual centers. Physica B. 308-310:2001;738-741.
6. Taniguchi M., Ikoma T. Spectral distributions of photoquenching rate and multimetastable states for midgap electron traps (EL2 family) in GaAs. Appl Phys Lett. 45:1984;69-71.
7. Chadi D.J., Chang K.J. Metastability of the isolated arsenic-antisite defect in GaAs. Phys Rev Lett. 60:1988;2187-2190.
8. Capaz R.B., Cho K., Joannopoulos J.D. Signature of bulk and surface arsenic antisite defects in GaAs (1. 1 0) Phys Rev Lett. 75:1995;1811-1814.
9. Zhang S.B. Defect metastability in surfaces. a study of EL2 defect in GaAs (1 1 0) Phys Rev B. 60:1999;4462-4465.
10. Troullier N., Martins J.L. Efficient pseudopotentials for plane-wave calculations. Phys Rev B. 43:1991;1993-2006.
11. Hida A., Mera Y., Maeda K. Electric field modulation spectroscopy by scanning tunneling microscopy with a nanometer-scale resolution. Appl Phys Lett. 78:2001;3029-3031.
12. Maeda K., Hida A., Mera Y. STM nanospectroscopic study of defects in semiconductors. Mater Res Soc Symp Proc. 719:2002;153-158.
13. Huang K., Rhys A. Theory of light absorption and non-radiative transitions in F-centers. Proc R Soc London A. 204:1950;406-423.
14. Trautman P., Baranowski J.M. Structure and metastability of the EL2 defect in GaAs. Int J Mod Phys. 9:1995;1263-1312.
15. Vincent G., Bois D., Chantre A. Photoelectric memory effect in GaAs. J Appl Phys. 53:1982;3643-3649.
16. Zener C. Non-adiabatic crossing of energy levels. Proc R Soc London A. 137:1932;696-702.