Scanning tunneling microscopy imaging of charged defects on clean Si(100)-(2×1)

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 4, 2003, Pages 1506-1509

  Brown, G W ^a   Grube, H ^a   Hawley, M E ^a   Schofield, S R ^b   Curson, N J ^b   Simmons, M Y ^b   Clark, R G ^b  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRIC CHARGE; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; HYDROGEN; PASSIVATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SURFACES;

ATOMIC SCALE ELECTRONIC STRUCTURE; CHARGED DEFECTS; CLEAVAGE FACES; HYDROGEN DECORATION; SEMICONDUCTOR CRYSTALS;

SEMICONDUCTING SILICON;

EID: 0041528446     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1566973     Document Type: Article

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