-
3
-
-
0002691353
-
GaN-dawn of 3rd-generation-semiconductors
-
Chinese source
-
Liang Chunguang, Zhang Ji. GaN-dawn of 3rd-generation-semiconductors. Chinese Journal of Semiconductors, 1999, 20(2): 89 (in Chinese)
-
(1999)
Chinese Journal of Semiconductors
, vol.20
, Issue.2
, pp. 89
-
-
Liang, C.1
Zhang, J.2
-
4
-
-
0034184617
-
Rutherford backscattering and channeling, double crystal X-ray diffraction and photoluminescence of GaN
-
Chinese source
-
Yao Dongmin, Xin Yong, Wang Li, et al. Rutherford backscattering and channeling, double crystal X-ray diffraction and photoluminescence of GaN. Chinese Journal of Semiconductors, 2000, 21(5): 437 (in Chinese)
-
(2000)
Chinese Journal of Semiconductors
, vol.21
, Issue.5
, pp. 437
-
-
Yao, D.1
Xin, Y.2
Wang, L.3
-
5
-
-
0036868718
-
Photoluminescence of Mg-doped GaN epilayer at different concentrations
-
Chinese source
-
Zhou Xiaoying, Guo Wenping, Hu Hui, et al. Photoluminescence of Mg-doped GaN epilayer at different concentrations. Chinese Journal of Semiconductors, 2002, 23(11): 1168 (in Chinese)
-
(2002)
Chinese Journal of Semiconductors
, vol.23
, Issue.11
, pp. 1168
-
-
Zhou, X.1
Guo, W.2
Hu, H.3
-
6
-
-
22644449418
-
x solution on the reduction of Ohmic contact resistivity of p-type GaN
-
x solution on the reduction of Ohmic contact resistivity of p-type GaN. J Vac Sci Technol B, 1999, 17(2): 497
-
(1999)
J. Vac. Sci. Technol. B
, vol.17
, Issue.2
, pp. 497
-
-
Kim, J.K.1
Lee, J.L.2
Lee, J.W.3
-
7
-
-
85024796826
-
Mechanism for the reduction of the Schottky barrier heights of high-quality nonalloyed Pt contacts on surface-treated p-GaN
-
Jang J S, Seong T Y. Mechanism for the reduction of the Schottky barrier heights of high-quality nonalloyed Pt contacts on surface-treated p-GaN. J Appl Phys, 2000, 88: 3064
-
(2000)
J. Appl. Phys.
, vol.88
, pp. 3064
-
-
Jang, J.S.1
Seong, T.Y.2
-
8
-
-
1942434105
-
GaN surface treatments for metal contacts
-
Sun J, Rickert K A, Redwing J M, et al. GaN surface treatments for metal contacts. Appl Phys Lett, 1996, 69: 3212
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 3212
-
-
Sun, J.1
Rickert, K.A.2
Redwing, J.M.3
-
10
-
-
0037042060
-
Effects of addition one methane-based ECR plasma etching of gallium nitride
-
Jin Z, Hashizume T, Hasegawa H. Effects of addition one methane-based ECR plasma etching of gallium nitride. Appl Surf Sci, 2002, 190: 361
-
(2002)
Appl. Surf. Sci.
, vol.190
, pp. 361
-
-
Jin, Z.1
Hashizume, T.2
Hasegawa, H.3
-
11
-
-
0035535377
-
Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures
-
Hashizume T, Ootomo S, Oyama S, et al. Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures. J Vac Sci Technol B, 2001, 19(4): 1675
-
(2001)
J. Vac. Sci. Technol. B
, vol.19
, Issue.4
, pp. 1675
-
-
Hashizume, T.1
Ootomo, S.2
Oyama, S.3
-
12
-
-
0042338383
-
XPS and AES investigation of GaN films grown by MBE
-
Chinese source
-
Yuan Jinshe, Chen Guangde, Qi Ming, et al. XPS and AES investigation of GaN films grown by MBE. Acta Physica Sinica, 2001, 50: 2429 (in Chinese)
-
(2001)
Acta Physica Sinica
, vol.50
, pp. 2429
-
-
Yuan, J.1
Chen, G.2
Qi, M.3
-
13
-
-
0020191131
-
The electrical characteristics of degenerate InP Schottky diodes with an interfacial layer
-
Hattori K, Izumi Y. The electrical characteristics of degenerate InP Schottky diodes with an interfacial layer. J Appl Phys, 1982, 53: 6906
-
(1982)
J. Appl. Phys.
, vol.53
, pp. 6906
-
-
Hattori, K.1
Izumi, Y.2
-
14
-
-
0038801357
-
-
Beijing: Beijing University of Technology Press, Chinese source
-
Zhou Yongrong. Semiconductor material. Beijing: Beijing University of Technology Press, 1992: 159 (in Chinese)
-
(1992)
Semiconductor Material
, pp. 159
-
-
Zhou, Y.1
-
15
-
-
0000928891
-
Defect donor and acceptor in GaN
-
Look D C, Reynolds D C, Hemsky J W, et al. Defect donor and acceptor in GaN. Phys Rev Lett, 1997, 79: 2273
-
(1997)
Phys. Rev. Lett.
, vol.79
, pp. 2273
-
-
Look, D.C.1
Reynolds, D.C.2
Hemsky, J.W.3
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