-
1
-
-
0027646593
-
-
S. Strite, M. E. Lin, H. Morkoc, Thin Solid Films, 231 (1993), 197.
-
(1993)
Thin Solid Films
, vol.231
, pp. 197
-
-
Strite, S.1
Lin, M.E.2
Morkoc, H.3
-
2
-
-
0028385147
-
-
S. Nakamula, T. Mukai, M. Senoh, Appl.. Phys. Lett., 64 (1994), 1687.
-
(1994)
Appl.. Phys. Lett.
, vol.64
, pp. 1687
-
-
Nakamula, S.1
Mukai, T.2
Senoh, M.3
-
3
-
-
0031207162
-
-
S. Nakamula, M. Senoh, N. Iwata, T. Yamada, Jpn. J. Appl. Phys., 36 (1997), L1059.
-
(1997)
Jpn. J. Appl. Phys.
, vol.36
-
-
Nakamula, S.1
Senoh, M.2
Iwata, N.3
Yamada, T.4
-
5
-
-
0042625682
-
-
S. Nakamula, M. Senoh, S. Nagahama et al., Appl. Phys. Lett., 69(1996), 4056.
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 4056
-
-
Nakamula, S.1
Senoh, M.2
Nagahama, S.3
-
8
-
-
0042850752
-
-
in Chinese
-
Z. F. Li et al., Acta Phys. Sin., 49 (2000), 1614(in Chinese)
-
(2000)
Acta Phys. Sin.
, vol.49
, pp. 1614
-
-
Li, Z.F.1
-
9
-
-
0030259822
-
-
T. Mori, T. Ohwaki, Y. Taga et al., Thin Solid Films, 287 (1996), 184.
-
(1996)
Thin Solid Films
, vol.287
, pp. 184
-
-
Mori, T.1
Ohwaki, T.2
Taga, Y.3
-
11
-
-
0003394871
-
-
National Defense Industry Press, Beijing, in Chinese
-
J.Q. Wang et al., XPS/AES/UPS (National Defense Industry Press, Beijing, 1992), p.519 (in Chinese)
-
(1992)
XPS/AES/UPS
, pp. 519
-
-
Wang, J.Q.1
-
12
-
-
0006728185
-
-
X.Y. Zhu, M. Wolf, T. Huett, J. M. White, J. Chem. Phys., 97 (1992), 5856.
-
(1992)
J. Chem. Phys.
, vol.97
, pp. 5856
-
-
Zhu, X.Y.1
Wolf, M.2
Huett, T.3
White, J.M.4
-
13
-
-
23544460993
-
-
K. Otte, G. Lippold, D. Hirsch et al., Thin Solid Films, 361-362(2000), 502.
-
(2000)
Thin Solid Films
, vol.361-362
, pp. 502
-
-
Otte, K.1
Lippold, G.2
Hirsch, D.3
-
16
-
-
0345926260
-
-
Electronic Industrial Press, Beijig
-
J. H. Lu et al., Surface Analysis Technology (Electronic Industrial Press, Beijig, 1987), p.202
-
(1987)
Surface Analysis Technology
, pp. 202
-
-
Lu, J.H.1
-
17
-
-
0038801357
-
-
Beijing University of Technology Press, Beijing, in Chinese
-
Y. R. Zhou, Semiconductor Material (Beijing University of Technology Press, Beijing, 1992), p. 159 (in Chinese)
-
(1992)
Semiconductor Material
, pp. 159
-
-
Zhou, Y.R.1
-
18
-
-
0042349709
-
-
C. R. Kingsley, T. J. Whitaker, A. T. S. Wee et al., Mater. Sci. Engineer., B29(1992), 78.
-
(1992)
Mater. Sci. Engineer.
, vol.B29
, pp. 78
-
-
Kingsley, C.R.1
Whitaker, T.J.2
Wee, A.T.S.3
-
21
-
-
0001799977
-
-
P. Bogustawski, E. L. Briggs, J. Bemhoic, Appl. Phys. Lett., 69 (1996), 233.
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 233
-
-
Bogustawski, P.1
Briggs, E.L.2
Bemhoic, J.3
-
22
-
-
0032090929
-
-
O. Schon, B. Schineller, M. Heuken et al., J. Crystal Growth, 189/190(1998), 335.
-
(1998)
J. Crystal Growth
, vol.189-190
, pp. 335
-
-
Schon, O.1
Schineller, B.2
Heuken, M.3
|