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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 A, 2002, Pages 482-489

Quantum dot-size variation and its impact on emission and absorption characteristics: An experimental and theoretical modeling investigation

(4) Pal, D a,b Stoleru, V G a Towe, E b Firsov, D a

a University of Virginia (United States)

b PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY (Russian Federation)

Author keywords

(In, Ga)As GaAs; Carrier redistribution; Intraband absorption; Nanostructures; Photoluminescence; Quantum dot size distribution; Quantum dots; Strain

Indexed keywords

ABSORPTION; ELECTRON ENERGY LEVELS; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; STRAIN;

CARRIER REDISTRIBUTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036478499 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.482 Document Type: Article

Times cited : (22)

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