Field-induced non-equilibrium electron transport in an In 0.4Ga0.6N epilayer grown on GaN studied by subpicosecond raman spectroscopy

Semiconductor Science and Technology

Volumn 19, Issue 4 SPEC. ISS., 2004, Pages

  Liang, W ^a   Tsen, K T ^a   Ferry, D K ^b   Kim, K H ^c   Lin, J Y ^c   Jiang, H X ^c  

^a ARIZONA STATE UNIVERSITY   (United States)

^b Arizona State University   (United States)

^c KANSAS STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; FILM GROWTH; GALLIUM NITRIDE; LIGHT EMITTING DIODES; MONTE CARLO METHODS; RAMAN SPECTROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS;

DRIFT VELOCITY; PRECURSORS;

HETEROJUNCTIONS;

EID: 1942420249     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/4/140     Document Type: Conference Paper

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