Low-threshold operation of 1.34-μm GaInNAs VCSEL grown by MOVPE

IEEE Photonics Technology Letters

Volumn 17, Issue 5, 2005, Pages 950-952

  Yamada, M ^a   Anan, T ^a   Hatakeyama, H ^a   Tokutome, K ^a   Suzuki, N ^a   Nakamura, T ^a   Nishi, K ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Coarse wavelength division multiplexing (CWDM); GaInNAs; Metal organic vapor phase epitaxy (MOVPE); Vertical cavity surface emitting laser (VCSEL)

Indexed keywords

CURRENT DENSITY; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL COMMUNICATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; WAVELENGTH DIVISION MULTIPLEXING;

COARSE WAVELENGTH DIVISION MULTIPLEXING; THRESHOLD CURRENT; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 18944367289     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.844325     Document Type: Article

References (10)

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