Long wavelength VCSELs at honeywell

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4994, Issue , 2003, Pages 222-234

  Johnson, Ralph ^a   Blasingame, Virgil ^a   Tatum, Jim ^a   Chen, Bo Su ^a   Mathes, David ^a   Orenstein, James ^b   Wang, Tzu Yu ^a   Kim, Jin ^a   Kwon, Ho Ki ^a   Ryou, Jae Hyun ^a   Park, Gyoungwon ^a   Kalweit, Edie ^a   Chanhvongsak, Helen ^a   Ringle, Mike ^a   Marta, Terry ^a   Gieske, Joe ^a  

^a HONEYWELL   (United States)

^b Honeywell International ^*

Author keywords

1310; 1550; MBE; MOCVD; VCSEL

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

QUANTUM WELL MATERIALS;

LASERS;

EID: 0141456378     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.488221     Document Type: Conference Paper

References (4)

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2. James Harris and Vince Gambin, "GaInAsN:A new material in the quest for.communications lasers," Mat. Res. Soc. Symp. Proc. Vol. 722.
3. J. Koeth, R. Dietrich, A.Forchel, "GaSb vertical cavity surface emitting lasers for the 1.5 um range", Appl. Phys Lett. 72, 1638 (1998)
4. th International Semiconductor Laser Conference.