1.3 micron VCSEL arrays for telecom applications

Conference on Optical Fiber Communication, Technical Digest Series

Volumn 70, Issue , 2002, Pages 149-150

  Chirovsky, L M F ^a   Naone, R L ^a   Jackson, A W ^a   Prakash, S R ^a   Galt, D ^a   Thompson, L R ^a   Feld, S A ^a   Wasserbauer, J G ^a   Dalberth, M J ^a   Smith, J ^a   Hindi, J J ^a   Kisker, D W ^a  

^a Oplink Communications Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMMUNICATION CHANNELS (INFORMATION THEORY); ELECTRIC CURRENTS; MIRRORS; MOLECULAR BEAM EPITAXY; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; TRANSCEIVERS;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0036441756     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. A.W. Jackson, R.L. Naone, M.J. Dalberth, J. Smith, K.J. Malone, D.W. Kisker, J.F. Klem, K.D. Choquette, D. Serkland, and K. Geib, "OC-48 capable InGaAsN vertical cavity laser", Electron. Lett., 37, 355-356 (2001).
2. 1-xAs-AlAs-GaAs quantum well heterostructures and superlattices", Appl. Phys. Let., 57, 2844-2846 (1990).
3. R.L. Naone, A.W. Jackson, S.A. Feld, D. Galt, K.J. Malone, and J.J. Hindi, "Monolithic GaAs-based 1.3 μm VCSEL directly-modulated at 10 Gb/s" in Proceedings of the 2001 Conference on Lasers & Electro-Optics, Baltimore, MD, (2001).
4. B. Hawthorne, "Oxide VCSEL Reliability Summary", Honeywell, 2001 http://content.honeywell.com/vcsel/pdf/oxidequal.pdf.