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Volumn 572, Issue , 1999, Pages 23-32

Current status of SiC power switching devices: diodes & GTOs

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC INVERTERS; HIGH TEMPERATURE OPERATIONS; JUNCTION GATE FIELD EFFECT TRANSISTORS; MOSFET DEVICES; POWER ELECTRONICS; PULSE WIDTH MODULATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; THYRISTORS;

EID: 0033348650     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-23     Document Type: Conference Paper
Times cited : (6)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.