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Volumn 572, Issue , 1999, Pages 23-32
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Current status of SiC power switching devices: diodes & GTOs
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC BREAKDOWN;
ELECTRIC INVERTERS;
HIGH TEMPERATURE OPERATIONS;
JUNCTION GATE FIELD EFFECT TRANSISTORS;
MOSFET DEVICES;
POWER ELECTRONICS;
PULSE WIDTH MODULATION;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTOR DIODES;
THYRISTORS;
CURRENT RATING;
POWER SWITCHING DEVICES;
VOLTAGE CONTROLLED TURN OFF;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 0033348650
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-572-23 Document Type: Conference Paper |
Times cited : (6)
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References (14)
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