Current status of SiC power switching devices: diodes & GTOs

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 23-32

  Seshadri, S ^a   Agarwal, A K ^b   Hall, W B ^a   Mani, S S ^c   Macmillan, M F ^a   Rodrigues, R ^d   Hanson, T ^d   Khatri, S ^d   Sanger, P A ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b Arkansas Power Electronics International Inc   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d Silicon Power Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC INVERTERS; HIGH TEMPERATURE OPERATIONS; JUNCTION GATE FIELD EFFECT TRANSISTORS; MOSFET DEVICES; POWER ELECTRONICS; PULSE WIDTH MODULATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; THYRISTORS;

CURRENT RATING; POWER SWITCHING DEVICES; VOLTAGE CONTROLLED TURN OFF;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033348650     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-23     Document Type: Conference Paper

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