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Journal of Electronic Materials

Volumn 29, Issue 1, 2000, Pages 165-168

Optical characterization of (GaIn)(NAs)/GaAs MQW structures

(3) Koch, J a Hohnsdorf F a Stolz, W a

a PHILIPPS UNIVERSITY MARBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL DEFECTS; DEPOSITION; ENERGY GAP; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; X RAY DIFFRACTION ANALYSIS;

HIGH RESOLUTION X RAY DIFFRACTION (XRD) ANALYSIS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 18844475039 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-000-0114-4 Document Type: Article

Times cited : (5)

References (13)

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