Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix

Semiconductors

Volumn 33, Issue 2, 1999, Pages 165-168

  Zhukov, A E ^a   Egorov, A Yu ^a   Kovsh, A R ^a   Ustinov, V M ^a   Ledentsov, N N ^a   Maksimov, M V ^a   Tsatsul'nikov, A F ^a   Volovik, B V ^a   Kop'ev, P S ^a   Alferov, Zh I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033076667     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187664     Document Type: Article

References (17)

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