Field emission from nitrogen-implanted CVD diamond film grown on silicon wafer

Applied Physics A: Materials Science and Processing

Volumn 81, Issue 2, 2005, Pages 357-361

  Li, J J ^a   Zheng, W T ^b   Gu, C Z ^a,b   Jin, Z S ^b   Gu, G R ^b   Mei, X X ^c   Mu, Z X ^c   Dong, C ^c  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b JILIN UNIVERSITY   (China)

^c DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON EMISSION; FERMI LEVEL; FILM GROWTH; NITROGEN; RAMAN SPECTROSCOPY; SILICON WAFERS; X RAY PHOTOELECTRON SPECTROSCOPY;

FIELD EMISSION (FE); NITROGEN IMPLANTATION; ROOM TEMPERATURE (RT); WORK FUNCTIONS;

DIAMOND FILMS;

EID: 18844391751     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-004-2974-6     Document Type: Article

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