Fabrication of aluminum single-electron transistors with low resistance-capacitance product

Journal of Applied Physics

Volumn 96, Issue 11, 2004, Pages 6822-6826

  Brenning, Henrik ^a   Kubatkin, Sergey ^a   Delsing, Per ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CAPACITANCE; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; OXIDATION; POLYMETHYL METHACRYLATES; TUNNEL JUNCTIONS;

CHARGE DETECTION; GATE VOLTAGE; SINGLE ELECTRON TRANSISTORS (SET); WORKING DEVICES;

ELECTRONS;

EID: 18844366274     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1806996     Document Type: Article

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