Raster scan patterning solution for 100 nm and 70 nm OPC masks

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4754, Issue , 2002, Pages 705-716

  Abboud, Frank ^a   Baik, Ki‐Ho ^a   Chakarian, Varoujan ^a   Cole, Damon ^a   Dean, Robert ^a   Gesley, Mark ^a   Gillman, Herb ^a   Moore, William ^a   Mueller, Mark ^a   Naber, Bob ^a   Newman, Tom ^a   Puri, Romin ^a   Raymond Iii, F ^a   Rougieri, Mario ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

E beam; Electron beam lithography; Hierarchical data; MEBES; Photomask; Raster Graybeam

Indexed keywords

AMPLIFICATION; ELECTRON BEAM LITHOGRAPHY; PHOTORESISTS; PRODUCTIVITY; SEMICONDUCTOR DEVICES; SENSITIVITY ANALYSIS; THROUGHPUT;

PHOTOMASKS;

MASKS;

EID: 18744410064     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.476923     Document Type: Article

References (15)

1. O. Toublan, E. Sahouria, N. Cobb, T. Do, T. Donnelly, Y. Granik, F. Schellenberg, and P. Schiavone, "Phase aware proximity correction for advanced masks," Optical Microlithography XIII, Proc. SPIE vol. 4000, pp. 160-170, 2000.
2. F. Schellenberg and L. Capodieci, "Impact of RET on physical layouts," Proc. ISPD, pp. 52-55, 2001.
3. L. Capodieci, R. Socha, U. Hollerbach, F. Chen, M. Dusa, N. Cobb, Y. Granik, E. Sahouria, and O. Toublan, "Effects of advanced illumination schemes on design manufacturability and interactions with optical proximity corrections," Proc. SPIE vol. 4181, 2001.
4. st Annual BACUS Symposium on Photomask Technology, Proc. SPIE vol. 4562, pp. 721-726, 2001.
5. J. Chabala, S. Weaver, D. Alexander, H. Pearce-Percy, M. Lu, D. Cole, and F. Abboud, "Evaluation of a high-dose, extended multipass gray writing system for 130-nm pattern generation," Emerging Lithographic Technologies IV, Proc. SPIE vol. 3997, pp. 309-325, 2000.
6. th Annual BACUS Symposium on Photomask Technology, Proc. SPIE vol. 4186, pp. 1-15, 2001.
7. C. Sauer, F. Abboud, S. Babin, V. Chakarian, A. Ghanbari, R. Innes, D. Trost, and F. Raymond III, "Initial benchmarking of a new electron-beam raster pattern generator for 130-100 nm maskmaking," Emerging Lithographic Technologies IV, Proc. SPIE vol. 3997, pp. 284-300, 2000.
8. F. Abboud, S. Babin, V. Chakarian, A. Ghanbari, R. Innes, F. Raymond III, A. Sagle, and C. Sauer, "Design considerations for an electron-beam pattern generator for the 130-nm generation masks," Photomask and x-ray mask technology VI, Proc. SPIE vol. 3748, pp. 385-399, 1999.
9. st Annual BACUS Symposium on Photomask Technology, Proc. SPIE vol. 4562, pp. 1-8, 2002.
10. T. Newman, J. Chabala, B.J. Marleau, F. Raymond III, O. Toublan, M. Gesley, and F. Abboud, "Evaluation of OPC mask printing with a raster scan pattern generator," Optical Microlithography XV, to be published in Proc. SPIE vol. 4691, 2002.
11. K.H. Baik, V. Chakarian, B. Dean, M. Lu, B. Naber, T. Newman, M. Wiltse, and F. Abboud, "High productivity mask writer with broad operating range," Photomask and Next-Generation Lithography Mask Technology VIII, Proc. SPIE vol. 4409, pp. 228-237, 2001.
12. K.H. Baik, R. Dean, M. Mueller, M. Lu, H. Lem, S. Osborne, and F. Abboud, "REAP (raster e-beam advanced process) using 50 kV raster e-beam system for sub-100 nm node mask technology," Emerging Lithographic Technologies VI, to be published in Proc. SPIE vol. 4688, 2002.
13. M. Mueller, S. Komarov, and K.H. Baik, "Dry etching of chrome for photomasks for 100 nm technology using chemically amplified resist," Photomask and Next-Generation Lithography Mask Technology IX, to be published in Proc. SPIE vol. 4754, 2002.
14. G. Owen, P. Rissman, and M.F. Long, "Application of the GHOST proximity effect correction scheme to round beam and shaped beam electron lithography systems," J. Vac. Sci. Technol., B 3(1), pp. 153-158, Jan/Feb 1985.
15. K. Moriizumi and A.N. Broers, "Tolerance on alignment error in GHOST proximity effect correction," J. Vac. Sci. Technol., B 11(6), pp. 2114-2120, Nov/Dec 1993.