Lithographic performance results for a new 50 kV electron-beam mask writer

Proceedings of SPIE- The International Society for Optical Engineering

Volumn 4186, Issue , 2001, Pages 1-15

  Chakarian, V ^a   Bylciw, S ^a   Sauer, C ^a   Trost, D ^a   Zywno, M ^a   Teitzel, R ^a   Raymond Iii, F ^a   Abboud, F ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

CD control; CD uniformity; Electron beam; Graybeam; Lithography; MEBES; Resist heating

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; OPTICAL RESOLVING POWER; PHOTORESISTS; SCANNING;

AUTOMATED MATERIAL HANDLING SYSTEM (AHMS); ELECTRON-BEAM MASK WRITERS; OPTICAL PROXIMITY CORRECTION (OPC); PATTERN GENERATION SYSTEMS;

MASKS;

EID: 0035051025     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.410672     Document Type: Article

References (11)

1. Pattern generation requirements for maskmaking beyond 130 nm
2. Design considerations for an electron-beam pattern generator for the 130-nm generation masks
3. Advanced mask patterning technology for 130-100 nm generation
4. An electron-graybeam writing strategy for the 130 and 100 nm generations of masks
5. Image quality enhancements for raster scan lithography
6. Feasibility study of new graybeam writing strategies for raster scan mask generation
7. Address data reduction and lithographic performance of graybeam writing strategies for raster scan mask generation
8. Electrodynamics of fast beam blankers
9. Experimental evaluation of an electron-beam pulse modulated blanker (160 MHz) for next-generation electron-beam raster scan systems
10. Assessment of thermal loading-induced distortions in optical photomasks due to e-beam multipass patterning
11. Experimental and numerical investigations of photomask substrate heating due to electron-beam patterning