Growth mechanisms in excimer laser photolytic deposition of gallium nitride at 500°C

Journal of Crystal Growth

Volumn 160, Issue 3-4, 1996, Pages 201-206

  Zhou, Bing ^a   Li, Xin ^a   Tansley, T L ^a   Butcher, K S A ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL PHASE; EXCIMER LASER PHOTOLYTIC DEPOSITION; GALLIUM NITRIDE; GROWTH MECHANISMS; TEMPERATURE DEPENDENCE; THERMAL ACTIVATION ENERGY; TRIMETHYLGALLIUM; ULTRAVIOLET PHOTOLYTIC DECOMPOSITION;

ACTIVATION ENERGY; AMMONIA; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; DECOMPOSITION; FLUORESCENCE; LASER APPLICATIONS; PHOTOLYSIS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; TEMPERATURE;

SEMICONDUCTOR GROWTH;

EID: 0030107103     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00602-8     Document Type: Article

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