Effect of Hydrogen and Thermal Conductivity on Nucleation of Polycrystalline Si by Excimer Laser Annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 1, 2004, Pages 293-298

  Kawamoto, Naoya ^a   Matsuo, Naoto ^b   Hisashi, A B E ^c   Anwar, Fakhrul ^a   Hasegawa, Isao ^c   Yamano, Koji ^c   Hamada, Hiroki ^c  

^a YAMAGUCHI UNIVERSITY   (Japan)

^b UNIVERSITY OF HYOGO   (Japan)

^c SANYO ELECTRIC CO LTD   (Japan)

Author keywords

Crystallinity; Excimer laser annealing; Polyorystalline silicon; Raman spectroscopy; Silicon nitride; Thermal conductivity

Indexed keywords

ANNEALING; EXCIMER LASERS; FABRICATION; MORPHOLOGY; NUCLEATION; PHASE TRANSITIONS; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SEMICONDUCTING FILMS; SILICON NITRIDE; THERMAL CONDUCTIVITY;

CRYSTALLINITY; EXCIMER LASER ANNEALING;

POLYSILICON;

EID: 1842709289     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.293     Document Type: Article

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