Study of crystal growth mechanism for poly-Si film prepared by excimer laser annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 2 A, 2000, Pages 351-356

  Matsuo, Naoto ^a   Aya, Youichiro ^b   Kanamori, Takeshi ^a   Nouda, Tomoyuki ^b   Hamada, Hiroki ^b   Miyoshi, Tadaki ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

^b SANYO ELECTRIC CO LTD   (Japan)

Author keywords

Dislocation; Excimer laser annealing; Nucleation; Poly Si; Recrystallization; Secondary grain growth; Textured grain growth

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRYSTAL GROWTH; CRYSTALLIZATION; DISLOCATIONS (CRYSTALS); EXCIMER LASERS; FILM PREPARATION; GRAIN GROWTH; NUCLEATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; TEXTURES;

EXCIMER LASER ANNEALING;

SEMICONDUCTING FILMS;

EID: 0033891109     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.351     Document Type: Article

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