Characterization of Poly-Silicon Film Prepared by Excimer Laser Annealing

Shinku/Journal of the Vacuum Society of Japan

Volumn 41, Issue 9, 1998, Pages 798-801

  Matsuo, Naoto ^a   Aya, Yoichiro ^b   Kanamori, Takeshi ^a   Nouda, Tomoyuki ^b   Hamada, Hiroki ^b   Kinugasa, Akinori ^a   Miyoshi, Tadaki ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

^b SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DEHYDROGENATION; EXCIMER LASERS; FILM PREPARATION; PARAMAGNETIC RESONANCE; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SURFACE ROUGHNESS;

CRYSTALLINITY; LASER ENERGY DENSITY; LASER SHOT;

SEMICONDUCTING FILMS;

EID: 0032319918     PISSN: 05598516     EISSN: None     Source Type: Journal    
DOI: 10.3131/jvsj.41.798     Document Type: Article

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