Crystal growth of low-temperature processed poly-Si by excimer laser annealing - dependences of poly-Si grain on energy density and shot number

Shinku/Journal of the Vacuum Society of Japan

Volumn 43, Issue 12, 2000, Pages 1120-1125

  Matsuo, Naoto ^a   Abe, Hisashi ^b   Kawamoto, Naoya ^a   Taguchi, Ryouhei ^a   Nouda, Tomoyuki ^b   Hamada, Hiroki ^b   Miyoshi, Tadaki ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

^b SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTALLIZATION; ELECTRONIC DENSITY OF STATES; EXCIMER LASERS; GRAIN SIZE AND SHAPE; LOW TEMPERATURE OPERATIONS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY;

CRYSTAL GROWTH MECHANISM; ENERGY DENSITY; EXCIMER LASER ANNEALING; FULL WIDTH AT HALF MAXIMUM; SHOT NUMBER;

POLYSILICON;

EID: 0034461065     PISSN: 05598516     EISSN: None     Source Type: Journal    
DOI: 10.3131/jvsj.43.1120     Document Type: Article

References (5)

1. N. Matsuo, Y. Aya, N. Kawamoto, F. Anwar, FT. Nouda, H. Hamada and T. Miyoshi: Dig. Tech. Papers. AM-LCD, 1999, pp. 95-98.
2. Y. Aya, T. Nouda, H. Abe, Y. Miyai, M. Iseki and H. Hamada: Dig. Tech. Papers. AM-LCD, 1999, pp. 25-28.
3. S. R. Stiffler, P. V. Evans and A. L. Greer: Acta metall. Mater., 40 (1992) 1617.
4. N. Matsuo, Y. Aya, T. Kanamori, T. Nouda, H. Hamada and T. Miyoshi: Jpn. J. Appl. Phys, 39 (2000) 351.
5. th Symp. Semiconductor and Integrated Circuit Technolgy, 1993, pp. 187-192.