High output power near-ultraviolet and violet light-emitting diodes fabricated on patterned sapphire substrates using metalorganic vapor phase epitaxy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5187, Issue , 2004, Pages 243-249

  Tadatomo, Kazuyuki ^a   Okagawa, Hiroaki ^a   Ohuchi, Youichiro ^a   Tsunekawa, Takashi ^a   Kudo, Hiromitsu ^a   Sudo, Yasuhide ^a   Kato, Munehiro ^b   Taguchi, Tsunemasa ^c  

^a Mitsubishi Cable Industries Ltd   (Japan)

^b STANLEY ELECTRIC CO LTD   (Japan)

^c YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

LED; MOVPE; Patterned substrate; Solid state lighting; UV; White LED

Indexed keywords

GALLIUM NITRIDE; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLITHOGRAPHY; QUANTUM EFFICIENCY; REACTIVE ION ETCHING; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET RADIATION;

PATTERNED SUBSTRATES; SOLID STATE LIGHTING; WHITE LED;

LIGHT EMITTING DIODES;

EID: 1842689022     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.513288     Document Type: Conference Paper

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