Profile control of SiO2 trench etching for damascene interconnection process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 A, 2001, Pages 2501-2505

  Seta, S ^a   Sekine, M ^a   Hayashi, H ^a   Yoshida, Y ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

CFx radical density; Microtrench etching; SiO2; The center of trench bottom; Trench

Indexed keywords

CARBON MONOXIDE; FLUOROCARBONS; MAGNETRONS; PRESSURE EFFECTS; SILICA; THIN FILMS;

MICROTRENCH ETCHING;

ETCHING;

EID: 0035302009     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2501     Document Type: Article

References (10)