Mechanism of highly selective SiO2 to Si3N4 etching using C4F8 + CO magnetron plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 8 B, 1999, Pages 4910-4916

  Hayashi, Hisataka ^a   Sekine, Makoto ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

C4F8 + CO plasma; Oxide etching; Selective etching

Indexed keywords

CARBON; CARBON MONOXIDE; CARRIER CONCENTRATION; DISSOCIATION; FLUORINE; FLUOROCARBONS; MAGNETRONS; MASS SPECTROMETRY; REACTION KINETICS; SILICA; SILICON NITRIDE; THICKNESS MEASUREMENT;

APPEARANCE VOLTAGE MASS SPECTROMETRY; CARBON TO FLUORINE RATIO; ELECTRON IMPACT DISSOCIATION; ETCHING RATE; GAS MIXING RATIO; OPTICAL EMISSION SPECTROSCOPY; OXIDE ETCHING; QUADRUPOLE MASS SPECTROMETRY; SECONDARY ELECTRON MULTIPLIER DETECTOR; SELECTIVE ETCHING;

PLASMA ETCHING;

EID: 0033175276     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4910     Document Type: Article

References (4)

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