A novel resist and post-etch residue removal process using ozonated chemistry

Solid State Technology

Volumn 41, Issue 12, 1998, Pages 57-60

  De Gendt, S ^a   Wauters, J ^a,b   Heyns, M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF TENNESSEE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL CLEANING; ETCHING; OZONIZATION; PHOTORESISTS; SILICON WAFERS; SURFACE CLEANING;

POST-ETCH RESIDUE REMOVAL;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0032312746     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (3)

1. S. De Gendt, et al., "A novel resist and post-etch residue removal process using ozonated chemistries," Symposium on VLSI Technology Digest of Technical Papers, p. 168, 1998.
2. J. Staehelin, J. Hoigne, "Decomposition of ozone in water," Environ. Sci. Technol., 16, p. 676, 1982.
3. K. Sehested, et al., "The primary reaction in decomposition of ozone in acidic aqueous solutions," Environ. Sci. Technol., 25, 1589, 1991.