Low-stress W/Cr films for SCALPEL ® mask scattering layers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 4, 1999, Pages 1385-1389

  Windt, David L ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644451791     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590841     Document Type: Article

References (12)

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11. D. L. Windt, W. L. Brown, C. A. Volkert, and W. K. Waskiewicz, J. Appl. Phys. 78, 2423 (1995).
12. The stress difference could also be due, in principle, to the small difference in the coefficients of thermal expansion between silicon and siliconnitride; but to explain the measured stress difference of several hundred MPa measured here would require a substrate temperature of roughly 5000 °C during deposition, which is completely unreasonable.