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Volumn 33, Issue 3, 2004, Pages 185-193

Characterization Survey of GaxIn1-xAs/InAs yP1-y Double Heterostructures and InAsyP 1-y Multilayers Grown on InP

Author keywords

Heteroepitaxy; InP; Lattice mismatch; Transmission electron microscopy (TEM); X ray diffraction (XRD)

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; MULTILAYERS; PHOTOVOLTAIC CELLS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EID: 1842479740     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0178-7     Document Type: Review
Times cited : (20)

References (41)
  • 8
    • 1842469016 scopus 로고    scopus 로고
    • U.S. patent 6,300,557 (9 October)
    • M.W. Wanlass, U.S. patent 6,300,557 (9 October 2001).
    • (2001)
    • Wanlass, M.W.1
  • 9
    • 1842573530 scopus 로고
    • U.S. patent 5,471,076 (28 November)
    • T. Murakami and H. Takahashi, U.S. patent 5,471,076 (28 November 1995).
    • (1995)
    • Murakami, T.1    Takahashi, H.2
  • 13
    • 1842521118 scopus 로고
    • ed. J.W. Matthews (New York: Academic Press)
    • J.W. Matthews, Epitaxial Growth (Part B), ed. J.W. Matthews (New York: Academic Press, 1975), pp. 562-566.
    • (1975) Epitaxial Growth (Part B) , pp. 562-566
    • Matthews, J.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.