Observation of 〈100〉 misfit dislocations in In0.06Ga0.94As/GaAs heterostructure by synchrotron radiation topography

Journal of Applied Physics

Volumn 80, Issue 3, 1996, Pages 1446-1449

  Zeng, W ^a   Jiang, S S ^a   Ferrari, C ^b   Gennari, S ^b   Salviati, G ^b  

^a NANJING UNIVERSITY   (China)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CATHODOLUMINESCENCE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; POINT DEFECTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SYNCHROTRON RADIATION; THERMODYNAMIC STABILITY;

BURGERS VECTOR; CLIMB MECHANISMS; DOUBLE CRYSTAL TOPOGRAPHY; INDIUM GALLIUM ARSENIDE; MISFIT DISLOCATIONS; POISSON RATIO; VACANCIES;

DISLOCATIONS (CRYSTALS);

EID: 0030217156     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363012     Document Type: Article

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