Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth temperatures

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 616-620

  D'Hondt, M ^a   Moerman, I ^a   Demeester, P ^a  

^a GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; PHOTODETECTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

LATTICE MISMATCHED MOVPE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030687699     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00602-1     Document Type: Article

References (8)

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