Efficient 2.0-2.6 μm wavelength photoluminescence from narrow bandgap InAsP/InGaAs double heterostructures grown on InP substrates

Journal of Electronic Materials

Volumn 25, Issue 9, 1996, Pages 1501-1505

  Garbuzov, D ^a   Kim, D S ^a   Forrest, S R ^a   Menna, R ^a,b   Lange, M ^a,c   Olsen, G H ^a,c   Cohen, M ^a,c  

^a Princeton University   (United States)

^b SARNOFF CORPORATION   (United States)

^c GOODRICH CORPORATION   (United States)

Author keywords

2.0 2.6 m Wavelength; Efficient photoluminescence; Graded composition buffer layer; InAsyP1 y InxGa1 xAs double heterostructure

Indexed keywords

EID: 1842625579     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02655390     Document Type: Article

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