Investigation of the Structural Defects in GaN Thin Films Grown by Organometallic Vapor Phase Epitaxy

Metals and Materials International

Volumn 9, Issue 1, 2003, Pages 77-82

  Choi, J H ^a   Lim, S J ^a   Cho, M S ^a   Cho, N H ^a   Chung, S J ^b   Sohn, C S ^c  

^a Inha University   (South Korea)

^b Seoul National University   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Dislocation; GaN; Inversion domain boundary (IDB); TEM; Thin film

Indexed keywords

BINARY ALLOYS; BURGERS VECTOR; DISLOCATIONS (CRYSTALS); FILM PREPARATION; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; ORGANOMETALLICS; SAPPHIRE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

EPITAXIAL RELATIONSHIPS; INVERSION DOMAIN BOUNDARIES; ORGANO-METALLIC VAPOR-PHASE EPITAXIES; ORGANOMETALLIC VAPOR PHASE EPITAXY; PROPAGATION BEHAVIOR; SAPPHIRE SUBSTRATES; STRUCTURAL DEFECT; STRUCTURAL FEATURE;

THIN FILMS;

EID: 1842472942     PISSN: 15989623     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF03027234     Document Type: Article

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