Nitridation of thermal SiO2 films by radio-frequency plasma assisted electron cyclotron resonance: effect of plasma modes and process parameters

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 19, Issue 1, 2001, Pages 9-16

  Raveh, A ^a  

^a The University of North Carolina at Chapel Hill   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; ELECTRON CYCLOTRON RESONANCE; ELLIPSOMETRY; IONS; NITRIDING; PLASMAS; SILICA; SUBSTRATES; THERMOOXIDATION;

PLASMA MODES; RADIO FREQUENCY DISCHARGES; RADIO FREQUENCY PLASMA ASSISTED ELECTRON CYCLOTRON RESONANCE; SILICA FILMS; SILICON OXYNITRIDE;

SEMICONDUCTING FILMS;

EID: 0035104078     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1331295     Document Type: Article

References (2)

1. E. A. Irene, CRC Crit. Rev. Solid State Mater. Sci. 14, 175 (1988).
2. D. W. Hess, IBM J. Res. Dev. 43, 127 (1999).