Proceedings of the 1996 International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 388, Issue 3, 1997, Pages 283-446

[No Author Info available]

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DOSIMETRY; NEUTRONS; PROTONS; RADIATION EFFECTS; SEMICONDUCTING DIAMONDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS;

EIREV; NEUTRON INDUCED DEEP LEVELS; PIONS; RADIATION HARDNESS; SILICON DETECTORS;

RADIATION DETECTORS;

EID: 0031118044     PISSN: 01689002     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/S0168-9002(96)01256-9     Document Type: Conference Review

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