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Materials Science in Semiconductor Processing

Volumn 8, Issue 4, 2005, Pages 467-471

Effects of deposition temperature on the structure and thermal stability of a-C:F films with low dielectric constant

(3) Ning, Zhaoyuan a Cheng, Shanhua a Chen, Lingling a

a SOOCHOW UNIVERSITY (China)

Author keywords

Deposition temperature; Dielectric film; Thermal stability

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; CROSSLINKING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON CYCLOTRON RESONANCE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MICROELECTRONICS; PERMITTIVITY; RAMAN SPECTROSCOPY; THERMAL EFFECTS; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

ABSORPTION BAND; DEPOSITION TEMPERATURE; FILM THICKNESS; SUBSTRATE TEMPERATURE;

DIELECTRIC FILMS;

EID: 18144401712 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/j.mssp.2004.07.003 Document Type: Article

Times cited : (6)

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