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Volumn 34, Issue 4, 2005, Pages 439-443

Preparation of ultrasmooth and defect-free 4H-SiC(0001) surfaces by elastic emission machining

Author keywords

Atomic force microscopy (AFM); Elastic emission machining (EEM); Low energy electron diffraction (LEED); Silicon carbide; Surface morphology

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; INTERFEROMETRY; LOW ENERGY ELECTRON DIFFRACTION; MACHINING; SEMICONDUCTOR MATERIALS; SURFACE PHENOMENA; SURFACE PROPERTIES; THERMAL CONDUCTIVITY; THIN FILMS;

EID: 18144395454     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0124-3     Document Type: Conference Paper
Times cited : (22)

References (14)
  • 14
    • 18644378580 scopus 로고    scopus 로고
    • Y. Mori et al., Proc. SPIE 4501, 30 (2001).
    • (2001) Proc. SPIE , vol.4501 , pp. 30
    • Mori, Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.