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Volumn 34, Issue 4, 2005, Pages 439-443
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Preparation of ultrasmooth and defect-free 4H-SiC(0001) surfaces by elastic emission machining
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Author keywords
Atomic force microscopy (AFM); Elastic emission machining (EEM); Low energy electron diffraction (LEED); Silicon carbide; Surface morphology
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
EPITAXIAL GROWTH;
INTERFEROMETRY;
LOW ENERGY ELECTRON DIFFRACTION;
MACHINING;
SEMICONDUCTOR MATERIALS;
SURFACE PHENOMENA;
SURFACE PROPERTIES;
THERMAL CONDUCTIVITY;
THIN FILMS;
DEFECT-FREE SURFACES;
ELASTIC EMISSION MACHINING (EEM);
EPITAXIAL FILMS;
HIGH-POWER DEVICE APPLICATIONS;
SILICON CARBIDE;
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EID: 18144395454
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-005-0124-3 Document Type: Conference Paper |
Times cited : (22)
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References (14)
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