Some characteristics of wide gap a-SiC:H films deposited by electron cyclotron resonance chemical vapor deposition using acetylene

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 4, 1997, Pages 1832-1836

  Yoon, S F ^a   Ahn, J ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031475392     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580649     Document Type: Article

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