The effects of process pressure and microwave power on the properties of boron-doped SiC:H films prepared using the ECR-CVD technique

Diamond and Related Materials

Volumn 5, Issue 11, 1996, Pages 1371-1377

  Yoon, S F ^a   Ji, R ^a   Ahn, J ^a   Milne, W I ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

a SiC:H films; Boron doping; Conductivity; ECR CVD technique; Microwave power; Process pressure

Indexed keywords

EID: 0003106533     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-9635(96)00555-9     Document Type: Article

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