SCOPUS 정보 검색 플랫폼

Volumn 16, Issue 5, 2001, Pages 402-405

Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures

(12) Harris, J J a,h Lee, K J a Wang, T b Sakai, S b Bougrioua, Z c Moerman, I c Thrush, E J d Webb, J B e Tang, H e Martin, T f Maude, D K g Portal, J C g

a UNIVERSITY COLLEGE LONDON (United Kingdom)

b UNIVERSITY OF TOKUSHIMA (Japan)

c GHENT UNIVERSITY (Belgium)

d Thomas Swan Scientific Equipment Ltd (United Kingdom)

e NATIONAL RESEARCH COUNCIL CANADA (Canada)

f DEFENCE SCIENCE AND TECHNOLOGY LABORATORY (United Kingdom)

g CNRS (France)

h Thermo VG Semicon (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; GALLIUM NITRIDE; LOW TEMPERATURE EFFECTS; MAGNETIC FIELD EFFECTS; OSCILLATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SHUBNIKOV-DE HAAS EFFECT; TRANSPORT PROPERTIES;

ALUMINUM GALLIUM NITRIDE; QUANTUM SCATTERING LIFETIME;

HETEROJUNCTIONS;

EID: 17944373904 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/16/5/321 Document Type: Article

Times cited : (18)

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