Analysis of quantum lifetime behaviour in modulation-doped n-channel Si/Si-1-xGex structures

Semiconductor Science and Technology

Volumn 13, Issue 10, 1998, Pages 1106-1110

  Shin, D H ^a,b   Becker, C E ^a,b   Harris, J J ^b   Fernandez J M ^a,d   Woods, N J ^a   Thornton, T J ^a,e   Maude, D K ^c   Portal, J C ^c  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

^c CNRS   (France)

^d NOKIA RESEARCH CENTER   (United States)

^e Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MAGNETORESISTANCE; PHONONS; SEMICONDUCTOR DOPING;

IONIZED IMPURITY SCATTERING; QUANTUM LIFETIME;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 0032182056     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/10/009     Document Type: Article

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