Breakdown mechanisms in ultra-thin oxides: Impact of carrier energy and current through substrate hot carrier stress study

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 10-15

  Ribes, G ^a,b   Bruyere S ^a   Denais, M ^a,c   Monsieur, F ^a   Huard, V ^d   Roy, D ^a   Ghibaudo, G ^b  

^a STMICROELECTRONICS   (France)

^b IMEP LAHC   (France)

^c AIX MARSEILLE UNIVERSITÉ   (France)

^d NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; ELECTRIC BREAKDOWN; ELECTRONS; HOT CARRIERS; HYDROGEN; MOS DEVICES; SILICA;

BREAKDOWN MECHANISMS; CARRIER ENERGY; ULTRA-THIN OXIDES;

MICROELECTRONICS;

EID: 1642603335     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2003.12.048     Document Type: Conference Paper

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