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Applied Physics Letters

Volumn 86, Issue 10, 2005, Pages 1-3

Scanning electron microscopy of dopant distribution in semiconductors

(5) Merli, P G a Morandi, V a Savini, G a Ferroni, M b Sberveglieri, G b

a CNR (Italy)

b UNIVERSITY OF BRESCIA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; BACKSCATTERING; BOUNDARY CONDITIONS; ELECTRON SCATTERING; ION IMPLANTATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

BACKSCATTERED ELECTRONS; BEAM ENERGY; DOPANT DISTRIBUTION; SEMICONDUCTOR TECHNOLOGY;

SEMICONDUCTOR MATERIALS;

EID: 17944363459 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1883708 Document Type: Article

Times cited : (10)

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