Simulation of carrier transport in carbon nanotube field effect transistors

European Solid-State Device Research Conference

Volumn , Issue , 2003, Pages 411-414

  Ungersböck, Enzo ^a   Gehring, Andreas ^a   Kosina, Hans ^a   Selberherr, Siegfried ^a   Cheong, Byoung Ho ^b   Choi, Won Bong ^b  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84907704136     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256901     Document Type: Conference Paper

References (10)

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2. T. Nakanishi, A. Bachtold, and C. Dekker, "Transport Through the Interface between a Semiconducting Carbon Nanotube and a Metal Electrode," Physical Review B, vol. 66, pp. 073307-1-4, 2002.
3. S. Appenzeiler, J. Knoch, R. Martei, V. Derycke, S. J. Wind, and P. Avouris, "Carbon Nanotube Electronics," IEEE Trans. Nanotechnology, vol. 1, no. 4, pp. 184-189, 2002.
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6. W. B. Choi, J. U. Chu, K. S. Jeong, E. J. Bae, and J. W. Lee, "Ultrahigh-Density Nanotransistors by Using Selectively Grown Vertical Carbon Nanotubes," Appl. Phys. Lett., vol. 79, no. 26, pp. 3696-3698, 2001.
7. S. Datta, Electronic Transport in Mesoscopic Systems, Cambridge University Press, 1995.
8. H. Ajiki and T. Ando, "Electronic States of Carbon Nanotubes," Journal of the Physical Society of Japan, vol. 62, no. 4, pp. 1255-1266, 1993.
9. W. R. Frensley, "Numerical Evaluation of Resonant States," Superlattices & Microstructures, vol. 11, no. 3, 1992.
10. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, Oxford Press, 1988.