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Volumn , Issue , 2004, Pages 228-233

Transistor and pin reordering for gate oxide leakage reduction in dual T ox circuits

Author keywords

[No Author keywords available]

Indexed keywords

GATE OXIDE LEAKAGE CURRENTS; GATE OXIDE TUNNELING CURRENTS; POWER DISSIPATION; SUBTHRESHOLD LEAKAGE;

EID: 17644368287     PISSN: 10636404     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICCD.2004.1347927     Document Type: Conference Paper
Times cited : (14)

References (19)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.