Surface smoothing mechanism of AlN film by initially alternating supply of ammonia

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 8 B, 2004, Pages

  Yan, Fawang ^a   Tsukihara, Masashi ^a   Nakamura, Akihiro ^a   Yadani, Takayuki ^a   Fukumoto, Tetsuya ^a   Naoi, Yoshiki ^a   Sakai, Shiro ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

AFM; AlN; MOCVD; TEM; Wet chemical etching

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; ETCHING; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; STRAIN; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINIUM NITRIDE (AIN); BURGERS VECTORS; POLARITY; WET CHEMICAL ETCHING;

AMMONIA;

EID: 6344231723     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L1057     Document Type: Article

References (10)

1. K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin and H. X. Jiang: Appl. Phys. Lett. 82 (2003) 1694.
2. C. M. Zetterling and M. Ostling.N. Nordell, O. Schon and M. Deschler: Appl. Phys. Lett. 70 (1997) 3549.
3. X.Shen, M. Shimizu and H. Okumura: Jpn. J. Appl. Phys. 42 (2003) L1293.
4. Y. Ohba and R. Sato: J. Cryst. Growth 221 (2000) 258.
5. Y. Wu, A. Hanlon, J. F. Kaeding, R. Sharma, P. T. Fini, S. Nakamura and J. S. Speck: Appl. Phys. Lett. 84 (2004) 912.
6. Y. Ishihara, J. Yamamoto, M. Kurimoto, T. Takano, T. Honda and H. Kawanishi: Jpn. J. Appl. Phys. 38 (1999) L1296.
7. Y. Ohba, R. Sato and K. Kaneko: Jpn. J. Appl. Phys. 40 (2001) L1293.
8. Q. Paduano and D. Weybume: Jpn. J. Appl. Phys. 42 (2003) 1590.
9. J. Jasinski, Z. L. Weber, Q. S. Paduano and D. W. Weyburne: Appl. Phys. Lett. 83 (2003) 2811.
10. P. Visconti, K. M. Jones, M. A. Reshchikov, R. Cingolani, H. Morkoc and R. J. Molnar: Appl. Phys. Lett. 77 (2000) 3532.